Diez et al., 2005 - Google Patents
Analysing defects in silicon by temperature-and injection-dependent lifetime spectroscopy (T-IDLS)Diez et al., 2005
View PDF- Document ID
- 8486089435390810094
- Author
- Diez S
- Rein S
- Glunz S
- Publication year
- Publication venue
- Proceedings of the 20th European photovoltaic solar energy conference
External Links
Snippet
To demonstrate the full potential of temperature-and injection-dependent lifetime spectroscopy (T-IDLS) as a method to characterise defects in silicon, measurements on an intentionally tungsten-contaminated wafer were performed at different temperatures up to …
- 238000002347 injection 0 title abstract description 10
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
- G01K17/06—Measuring quantity of heat conveyed by flowing mediums, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device
- G01K17/08—Measuring quantity of heat conveyed by flowing mediums, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device based upon measurement of temperature difference or of a temperature
- G01K17/20—Measuring quantity of heat conveyed by flowing mediums, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device based upon measurement of temperature difference or of a temperature across a radiating surface, combined with ascertainment of the heat transmission coefficient
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material
- G01N27/04—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by the preceding groups
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Schmidt | Temperature-and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors | |
| Augarten et al. | Calculation of quantitative shunt values using photoluminescence imaging | |
| Pletzer et al. | Influence of cracks on the local current–voltage parameters of silicon solar cells | |
| Schmidt et al. | Recombination activity of interstitial chromium and chromium-boron pairs in silicon | |
| EP2851696B1 (en) | Method for the extraction of recombination characteristics at metallized semiconductor surfaces | |
| Hameiri et al. | Effective bulk doping concentration of diffused and undiffused silicon wafers obtained from combined photoconductance and photoluminescence measurements | |
| CN108140690A (en) | The solar cell transmitter measured using non-contact doping concentration and minority carrier lifetime is characterized | |
| Platzek et al. | Potential-Seebeck-microprobe (PSM): measuring the spatial resolution of the Seebeck coefficient and the electric potential | |
| Zhu et al. | Application of the Newton–Raphson method to lifetime spectroscopy for extraction of defect parameters | |
| Boutchich et al. | Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373 K | |
| Diez et al. | Cobalt related defect levels in silicon analyzed by temperature-and injection-dependent lifetime spectroscopy | |
| Diez et al. | Analysing defects in silicon by temperature-and injection-dependent lifetime spectroscopy (T-IDLS) | |
| Pobegen et al. | Accurate high temperature measurements using local polysilicon heater structures | |
| Ziolkowski et al. | Interlaboratory Testing for High‐Temperature Power Generation Characteristics of a Ni‐Based Alloy Thermoelectric Module | |
| Keskitalo et al. | Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron-irradiated p-type silicon | |
| Briand et al. | Thermally isolated MOSFET for gas sensing application | |
| Paudyal et al. | The implementation of temperature control to an inductive‐coil photoconductance instrument for the range of 0–230° C | |
| Müller et al. | A method for imaging the emitter saturation current with lateral resolution | |
| Anashin et al. | Equipment and test results of the electronic components to SEE in the temperature range | |
| Diez et al. | ANALYSING MULTIPLE DEFECT LEVELS IN SILICON BY TEMPERATURE-AND INJECTION-DEPENDENT LIFETIME SPECTROSCOPY (T-IDLS) | |
| Castaldini et al. | Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon | |
| Lenz et al. | Traceable measurements of electrical conductivity and Seebeck coefficient of β‐Fe0. 95Co0. 05Si2 and Ge in the temperature range from 300 K to 850 K | |
| Diez et al. | Analyzing defects by temperature-and injection-dependent lifetime measurements | |
| Wagner et al. | Analysis of recombination centers in epitaxial silicon thin-film solar cells by temperature-dependent quantum efficiency measurements | |
| Kasemann et al. | Reliable hot‐spot classification in 10 ms using ultra‐fast lock‐in thermography |