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Jeon et al., 2008 - Google Patents

Characteristics of gallium-doped zinc oxide thin-film transistors fabricated at room temperature using radio frequency magnetron sputtering method

Jeon et al., 2008

Document ID
8429381925679859631
Author
Jeon H
Verma V
Hwang S
Lee S
Park C
Kim D
Choi W
Jeon M
Publication year
Publication venue
Japanese Journal of Applied Physics

External Links

Snippet

In this paper, we present bottom-gate-type Ga-doped zinc oxide (GZO) thin-film transistors (TFTs) using a certain conventional SiO2 gate insulator by applying a radio-frequency (RF) magnetron sputtering method at room temperature. A low gate leakage current was …
Continue reading at iopscience.iop.org (other versions)

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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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