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Chen et al., 2004 - Google Patents

Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition

Chen et al., 2004

Document ID
8373570759873359384
Author
Chen Y
Kimoto T
Takeuchi Y
Malhan R
Matsunami H
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

The homoepitaxy of 4H-SiC on trenched substrates by chemical vapor deposition has been investigated. Two types of 4H-SiC (0001) substrates inclined 8 toward [11 bar 2 0] or [1 bar 1 00] were used. 4H-SiC growth near trenches perpendicular to the off-direction tended to be …
Continue reading at iopscience.iop.org (other versions)

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