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Gourrier et al., 1980 - Google Patents

Oxidation of GaAs in an oxygen multipole plasma

Gourrier et al., 1980

Document ID
8316767275602770350
Author
Gourrier S
Mircea A
Bacal M
Publication year
Publication venue
Thin Solid Films

External Links

Snippet

In a multiple plasma source (which has a hot cathode associated with a magnetic confinement) homogeneous plasmas of satisfactory density ((5–10)× 10 10 cm-3) can be obtained in large volumes. This source appears to be very convenient for the study of …
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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