[go: up one dir, main page]

Feng et al., 1997 - Google Patents

Photoluminescence and Raman properties of MOCVD-grown In/sub 0.5/(Ga/sub 1-x/Al/sub x/)/sub 0.5/P layers under different growth conditions

Feng et al., 1997

Document ID
8219537534579309726
Author
Feng Z
Collins D
Armour E
Zawadzki P
Stall R
Pavlosky M
Publication year
Publication venue
Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials

External Links

Snippet

Two sets of In/sub 0.5/(Ga/sub 1-x/Al/sub x/)/sub 0.5/P/GaAs were prepared by metalorganic chemical vapor deposition, and a combined photoluminescence (PL) and Raman scattering investigation was performed. Variations of PL bands and Raman lines were observed from …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Similar Documents

Publication Publication Date Title
Hughes et al. Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates
McIntosh et al. Growth and characterization of AlInGaN quaternary alloys
Rieger et al. Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films
Kung et al. High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates
Tang et al. Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition
Oe Characteristics of semiconductor alloy GaAs1-xBix
Hamdani et al. Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy
Muth et al. Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys
Melnik et al. Physical properties of bulk GaN crystals grown by HVPE
Karam et al. Growth of device quality GaN at 550 C by atomic layer epitaxy
Ochalski et al. Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
US20080213543A1 (en) Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
EP0801156B1 (en) Process for vapor phase epitaxy of compound semiconductor
Schenk et al. Indium incorporation above 800 C during metalorganic vapor phase epitaxy of InGaN
Zhu et al. Structural properties of GaN films grown on sapphire by molecular beam epitaxy
Sohmer et al. GalnN/GaN-heterostructures and quantum wells grown by metalorganic vapor-phase epitaxy
Sun et al. Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)
Freitas Jr Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors
Agulló-Rueda et al. Raman spectroscopy of wurtzite InN films grown on Si
Teisseyre et al. Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
Wen et al. Influence of barrier growth temperature on the properties of InGaN/GaN quantum well
Dissanayake et al. Low‐temperature epitaxial growth and photoluminescence characterization of GaN
Feng et al. Photoluminescence and Raman properties of MOCVD-grown In/sub 0.5/(Ga/sub 1-x/Al/sub x/)/sub 0.5/P layers under different growth conditions
Reuter et al. Photoluminescence excitation spectroscopy of carbon-doped gallium nitride
Yuan et al. Doping superlattices in organometallic vapor phase epitaxial InP