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Tabatabai Yazdi et al., 2019 - Google Patents

Growth of Cd0. 96Zn0. 04Te single crystals by vapor phase gas transport method

Tabatabai Yazdi et al., 2019

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Document ID
8095356519000416694
Author
Tabatabai Yazdi S
Alinejad M
Tajabor N
Publication year
Publication venue
Iranian Journal of Physics Research

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Snippet

Cd0. 96Zn0. 04Te crystals were grown using vapor phase gas transport method (VPGT). The results show that dendritic crystals with grain size up to 3.5 mm can be grown with this technique. X-ray diffraction and Laue back-reflection patterns show that dendritic crystals are …
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
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    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising material or reactants forming it in situ to the melt
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed material
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
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    • C30B19/00—Liquid-phase epitaxial-layer growth
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    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
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