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Tsai, 2013 - Google Patents

Characteristics of Silicon Nanowire Field Electron Emission

Tsai, 2013

Document ID
8079962291770119253
Author
Tsai H
Publication year
Publication venue
Advanced Materials Research

External Links

Snippet

Silicon nanowires with fine tip curvature and high aspect ratio are the promising alternative as the electron emitter to promote field electron emission characteristics. The fabrication of silicon nanowires based on the vapor-liquid-solid (VLS) mechanism was performed in the …
Continue reading at www.scientific.net (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00Carbon; Compounds thereof
    • C01B31/02Preparation of carbon; Purification; After-treatment
    • C01B31/0206Nanosized carbon materials
    • C01B31/0293Other structures, e.g. nano-onions, nano-scrolls, nano-horns, nano-cones or nano-walls
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00Carbon; Compounds thereof
    • C01B31/02Preparation of carbon; Purification; After-treatment
    • C01B31/0206Nanosized carbon materials
    • C01B31/022Carbon nanotubes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies; Multistep manufacturing processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y30/00Nano-technology for materials or surface science, e.g. nano-composites

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