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Philipps et al., 2000 - Google Patents

Diode-pumped erbium-ytterbium-glass laser passively Q-switched with a PbS semiconductor quantum-dot doped glass

Philipps et al., 2000

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Document ID
7986137561357765912
Author
Philipps J
Töpfer T
Ebendorff-Heidepriem H
Ehrt D
Sauerbrey R
Borrelli N
Publication year
Publication venue
Appl. Phys. B

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Snippet

Q-switched and cw operation of different diodepumped erbium-ytterbium doped glasses at 1. 5 µm has been studied in a compact microlaser setup. For Q-switching we used a novel PbS semiconductor quantum-dot doped glass which offers low saturation intensity …
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    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
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    • H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
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    • H01S3/16—Solid materials
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    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
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    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
    • H01S3/1063—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a solid state device provided with at least one potential jump barrier
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    • H01S3/06—Construction or shape of active medium
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    • H01S3/11—Pulse generation, e.g. Q-switching, mode locking
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
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    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
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    • H01S3/08—Construction or shape of optical resonators or components thereof
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    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings

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