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Titov et al., 2022 - Google Patents

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Titov et al., 2022

Document ID
7979317360474488922
Author
Titov A
Karabeshkin K
Struchkov A
Nikolaev V
Azarov A
Gogova D
Karaseov P
Publication year
Publication venue
Vacuum

External Links

Snippet

The mechanisms of ion-induced defect formation and physical characteristics promoting radiation tolerance of wide and ultra-wide bandgap semiconductors are not well-studied and understood. In contrast to gallium nitride (GaN), gallium oxide (Ga 2 O 3) can be crystallized …
Continue reading at www.sciencedirect.com (other versions)

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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