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Asbeck et al., 1983 - Google Patents

Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

Asbeck et al., 1983

Document ID
7921784290395812010
Author
Asbeck P
Wang K
Miller D
Sullivan G
Sheng N
Sovero E
Higgins J
Publication year
Publication venue
Microwave and Millimeter-Wave Monolithic Circuits

External Links

Snippet

This paper reviews the present status of GaAIAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with f/sub max/above 100 GHz are described. Differential amplifiers are shown to have offset …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
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    • H01L29/0804—Emitter regions of bipolar transistors
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
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    • H01L29/0821—Collector regions of bipolar transistors
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    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
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    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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