[go: up one dir, main page]

Tired et al., 2017 - Google Patents

System simulations of a 1.5 áV SiGe 81–86áGHz E-band transmitter

Tired et al., 2017

View HTML
Document ID
7634759435349018920
Author
Tired T
Sandrup P
Nejdel A
Wernehag J
Sj÷ land H
Publication year
Publication venue
Analog Integrated Circuits and Signal Processing

External Links

Snippet

This paper presents simulation results for a sliding-IF SiGe E-band transmitter circuit for the 81–86áGHz E-band. The circuit was designed in a SiGe process with f T á= á200áGHz and uses a supply of 1.5 áV. The low supply voltage eliminates the need for a dedicated …
Continue reading at link.springer.com (HTML) (other versions)

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1425Balanced arrangements with transistors
    • H03D7/1441Balanced arrangements with transistors using field-effect transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1425Balanced arrangements with transistors
    • H03D7/1433Balanced arrangements with transistors using bipolar transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04LTRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00Modulated-carrier systems
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041Functional aspects of demodulators
    • H03D2200/0088Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products

Similar Documents

Publication Publication Date Title
Thyagarajan et al. A 240 GHz fully integrated wideband QPSK receiver in 65 nm CMOS
Wang et al. Analysis and design of high-order QAM direct-modulation transmitter for high-speed point-to-point mm-wave wireless links
Zhao et al. A 40 nm CMOS E-band transmitter with compact and symmetrical layout floor-plans
Lin et al. 1024-QAM high image rejection $ E $-band sub-harmonic IQ modulator and transmitter in 65-nm CMOS process
Shopov et al. Ultra-Broadband I/Q RF-DAC Transmitters
Ebrahimi et al. A high-fractional-bandwidth, millimeter-wave bidirectional image-selection architecture with narrowband LO tuning requirements
del Rio et al. A Wideband and High-Linearity E-B and Transmitter Integrated in a 55-nm SiGe Technology for Backhaul Point-to-Point 10-Gb/s Links
Vigilante et al. 5G and E-band communication circuits in deep-scaled CMOS
Dong et al. A 10-Gb/s 180-GHz phase-locked-loop minimum shift keying receiver
Li et al. A 220-GHz sliding-IF quadrature transmitter and receiver chipset for high data rate communication in 0.13-µm SiGe BiCMOS
Carpenter et al. Fully integrated D-band direct carrier quadrature (I/Q) modulator and demodulator circuits in InP DHBT technology
Zhao et al. CMOS 60-GHz and E-band power amplifiers and transmitters
Afzal et al. A highly efficient 165-GHz 4FSK 17-Gb/s transceiver system with frequency overlapping architecture in 65-nm CMOS
Zhao et al. A 3 Gb/s 64-QAM E-band direct-conversion transmitter in 40-nm CMOS
Ahasan et al. Frequency-domain-multiplexing single-wire interface and harmonic-rejection-based IF data de-multiplexing in millimeter-wave MIMO arrays
Tired et al. System simulations of a 1.5 áV SiGe 81–86áGHz E-band transmitter
Leifso et al. A monolithic 6 GHz quadrature frequency doubler with adjustable phase offset
Iotti et al. A low-power 64–84GHz frequency quadrupler based on transformer-coupled resonators for E-Band backhaul applications
Liu et al. An integrated LNA‐phase shifter in 65 nm CMOS for Ka‐band phased‐array receivers
Laskar et al. Advanced integrated communication microsystems
Chowdhury Efficient transmitters for wireless communications in nanoscale cmos technology
Iotti et al. Design of low-power wideband frequency quadruplers based on transformer-coupled resonators for E-Band backhaul applications
Khalaf et al. Low-Power Millimeter Wave Transmitters for High Data Rate Applications
Steyaert et al. RF communication circuits
Soumpasakou et al. Design and Implementation of a D-Band I/Q Modulator in a 130 nm SiGe BiCMOS Technology