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Ogura et al., 1983 - Google Patents

A capacitance investigation of InGaAs/InP isotype heterojunction

Ogura et al., 1983

Document ID
7538004127453856110
Author
Ogura M
Mizuta M
Onaka K
Kukimoto H
Publication year
Publication venue
Japanese journal of applied physics

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Snippet

We have measured deep levels near the InGaAs/InP heterointerface by DLTS and CV method. Three deep levels, E1, E2 and E3, have been found near the heterointerface, whose activation energies are 0.17 eV, 0.37 eV and 0.54 eV, respectively. The …
Continue reading at iopscience.iop.org (other versions)

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