Shin et al., 2010 - Google Patents
1-chip balanced FBAR filter for wireless handsetsShin et al., 2010
- Document ID
- 752011746893958302
- Author
- Shin J
- Park Y
- Kim Y
- Kim C
- Lee J
- Kim D
- Kim H
- Hwang S
- Song I
- Publication year
- Publication venue
- The 40th European Microwave Conference
External Links
Snippet
There is great demand for ultra-miniature and balanced RF filters as an essential component in communication systems. To make these needs, we proposed 1-chip balanced FBAR RF filter in this work. A novel FBAR configuration is developed to reduce the area of FBAR block …
- 235000012431 wafers 0 abstract description 12
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezo-electric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
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- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezo-electric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
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- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezo-electric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H03—BASIC ELECTRONIC CIRCUITRY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
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- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
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- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
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- H03H9/02—Details
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- H03H9/02086—Means for compensation or elimination of undesirable effects
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
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- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezo-electric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezo-electric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
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- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/0023—Balance-unbalance or balance-balance networks
- H03H9/0095—Balance-unbalance or balance-balance networks using bulk acoustic wave devices
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
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- H03H9/706—Duplexers
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- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
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