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Schubert et al., 2009 - Google Patents

High-voltage GaAs photovoltaic laser power converters

Schubert et al., 2009

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Document ID
7488537364203087216
Author
Schubert J
Oliva E
Dimroth F
Guter W
Loeckenhoff R
Bett A
Publication year
Publication venue
IEEE Transactions on Electron Devices

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Snippet

The main drawback of photovoltaic (PV) laser power converters based on GaAs material is the low output voltage, which is often insufficient to power electronic circuits directly. Aside from the use of a dc-dc converter in combination with a single PV converter, it is possible to …
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    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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    • H01L31/10Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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    • H01L31/0352Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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