Xianfeng et al., 2012 - Google Patents
Growth of Ag (In, Ga) Se2 films by modified three-stage method and influence of annealing on performance of solar cellsXianfeng et al., 2012
- Document ID
- 7365987190855809280
- Author
- Xianfeng Z
- Kobayashi T
- Kurokawa Y
- Yamada A
- Publication year
- Publication venue
- Japanese Journal of Applied Physics
External Links
Snippet
A modified three-stage method was introduced to deposit high-efficiency Ag (In, Ga) Se 2 (AIGS) solar cells. Cu (In, Ga) Se 2 (CIGS) and AIGS films were deposited by conventional and modified three-stage methods, respectively, to enable a comparison of the diffusion …
- 238000000137 annealing 0 title abstract description 20
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- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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