[go: up one dir, main page]

Hashimoto et al., 1989 - Google Patents

Development of a high deposition rate machine by ion beam sputtering

Hashimoto et al., 1989

Document ID
7304769461061392059
Author
Hashimoto I
Arimatsu K
Ishikawa Y
Tanaka S
Gejyo T
Publication year
Publication venue
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

External Links

Snippet

Recently a deposition method by ion beam sputtering was developed which is interesting for making films with superconductive, optical or magnetic properties. The ion beam sputtering method has many advantages such as process controllability, low working pressure and no …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/31Processing objects on a macro-scale
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns

Similar Documents

Publication Publication Date Title
EP0328076B1 (en) Thin film forming apparatus and ion source utilizing sputtering with microwave plasma
EP0328033B1 (en) Thin film forming apparatus and ion source utilizing plasma sputtering
CA2205576C (en) An apparatus for generation of a linear arc discharge for plasma processing
AU746645C (en) Method and apparatus for deposition of biaxially textured coatings
KR100559285B1 (en) Apparatus for steering the arc in a cathodic arc coater
JPS5810989B2 (en) Target profile for sputtering equipment
JPH0265033A (en) Ion beam source for radio frequency
CN100590221C (en) Ion beam emission source capable of outputting single ion energy
KR19990024031A (en) Cathode arc deposition equipment
JP2921874B2 (en) High efficiency sheet plasma sputtering equipment
CA1252581A (en) Electron beam-excited ion beam source
US5569361A (en) Method and apparatus for cooling a sputtering target
Hashimoto et al. Development of a high deposition rate machine by ion beam sputtering
JPH04235276A (en) Device for coating substrate
JPH01219161A (en) Ion source
US6432286B1 (en) Conical sputtering target
JP2674995B2 (en) Substrate processing method and apparatus
Clarke et al. Magnetic field and substrate position effects on the ion/deposition flux ratio in magnetron sputtering
Parsons et al. Thin Film Processes II
GB2058142A (en) Sputtering electrodes
Ishikawa A heavy negative ion sputter source: Production mechanism of negative ions and their applications
CN223061062U (en) Strong current pulse arc evaporation source with controllable magnetic field
Zhang et al. A reactive ion beam etching and coating system
JP2000017431A (en) MgO FILM FORMING METHOD AND PANEL
Moore et al. Advanced electron beam source for ultrahigh vacuum (molecular beam epitaxy) and high vacuum applications of thin film deposition