Franz et al., 2020 - Google Patents
Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and IrFranz et al., 2020
View HTML- Document ID
- 7121040634005872039
- Author
- Franz M
- Junghans R
- Schmitt P
- Szeghalmi A
- Schulz S
- Publication year
- Publication venue
- Beilstein journal of nanotechnology
External Links
Snippet
The wafer-level integration of high aspect ratio silicon nanostructures is an essential part of the fabrication of nanodevices. Metal-assisted chemical etching (MACE) is a promising low- cost and high-volume technique for the generation of vertically aligned silicon nanowires …
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon 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A1OS44LDQwLjYgTCA1OS45LDQwLjYgTCA2MC4wLDQwLjUgTCA2MC4wLDQwLjQgTCA2MC4xLDQwLjMgTCA2MC4yLDQwLjMgTCA2MC4yLDQwLjIgTCA2MC4yLDQwLjEgTCA2MC4zLDQwLjAgTCA2MC4zLDM5LjkgTCA2MC4zLDM5LjggTCA2MC4zLDM5LjcgTCA1OS4xLDM5LjcgWicgc3R5bGU9J2ZpbGw6IzAwMDAwMDtmaWxsLXJ1bGU6ZXZlbm9kZDtmaWxsLW9wYWNpdHk6MTtzdHJva2U6IzAwMDAwMDtzdHJva2Utd2lkdGg6MC4wcHg7c3Ryb2tlLWxpbmVjYXA6YnV0dDtzdHJva2UtbGluZWpvaW46bWl0ZXI7c3Ryb2tlLW9wYWNpdHk6MTsnIC8+CjxwYXRoIGQ9J00gNjAuMyw0NC4zIEwgNjAuMyw0NC4yIEwgNjAuMyw0NC4xIEwgNjAuMyw0NC4wIEwgNjAuMiw0My45IEwgNjAuMiw0My44IEwgNjAuMiw0My43IEwgNjAuMSw0My43IEwgNjAuMCw0My42IEwgNjAuMCw0My41IEwgNTkuOSw0My40IEwgNTkuOCw0My40IEwgNTkuNyw0My4zIEwgNTkuNyw0My4zIEwgNTkuNiw0My4yIEwgNTkuNSw0My4yIEwgNTkuNCw0My4yIEwgNTkuMyw0My4yIEwgNTkuMiw0My4yIEwgNTkuMSw0My4yIEwgNTkuMCw0My4yIEwgNTguOSw0My4yIEwgNTguOCw0My4yIEwgNTguNyw0My4zIEwgNTguNiw0My4zIEwgNTguNSw0My4zIEwgNTguNCw0My40IEwgNTguNCw0My41IEwgNTguMyw0My41IEwgNTguMiw0My42IEwgNTguMiw0My43IEwgNTguMSw0My44IEwgNTguMSw0My45IEwgNTguMCw0NC4wIEwgNTguMCw0NC4xIEwgNTguMCw0NC4yIEwgNTguMCw0NC4zIEwgNTguMCw0NC40IEwgNTguMCw0NC41IEwgNTguMCw0NC42IEwgNTguMCw0NC43IEwgNTguMSw0NC44IEwgNTguMSw0NC44IEwgNTguMiw0NC45IEwgNTguMiw0NS4wIEwgNTguMyw0NS4xIEwgNTguNCw0NS4yIEwgNTguNCw0NS4yIEwgNTguNSw0NS4zIEwgNTguNiw0NS4zIEwgNTguNyw0NS40IEwgNTguOCw0NS40IEwgNTguOSw0NS40IEwgNTkuMCw0NS41IEwgNTkuMSw0NS41IEwgNTkuMiw0NS41IEwgNTkuMyw0NS41IEwgNTkuNCw0NS41IEwgNTkuNSw0NS40IEwgNTkuNiw0NS40IEwgNTkuNyw0NS40IEwgNTkuNyw0NS4zIEwgNTkuOCw0NS4zIEwgNTkuOSw0NS4yIEwgNjAuMCw0NS4xIEwgNjAuMCw0NS4xIEwgNjAuMSw0NS4wIEwgNjAuMiw0NC45IEwgNjAuMiw0NC44IEwgNjAuMiw0NC43IEwgNjAuMyw0NC42IEwgNjAuMyw0NC41IEwgNjAuMyw0NC40IEwgNjAuMyw0NC4zIEwgNTkuMSw0NC4zIFonIHN0eWxlPSdmaWxsOiMwMDAwMDA7ZmlsbC1ydWxlOmV2ZW5vZGQ7ZmlsbC1vcGFjaXR5OjE7c3Ryb2tlOiMwMDAwMDA7c3Ryb2tlLXdpZHRoOjAuMHB4O3N0cm9rZS1saW5lY2FwOmJ1dHQ7c3Ryb2tlLWxpbmVqb2luOm1pdGVyO3N0cm9rZS1vcGFjaXR5OjE7JyAvPgo8L3N2Zz4K [Si] 0 title abstract description 51
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
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