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Veinberg-Vidal et al., 2016 - Google Patents

Manufacturing and characterization of III-V on silicon multijunction solar cells

Veinberg-Vidal et al., 2016

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Document ID
710774974115205807
Author
Veinberg-Vidal E
Dupré C
Garcia-Linares P
Jany C
Thibon R
Card T
Salvetat T
Scheiblin P
Brughera C
Fournel F
Desieres Y
Veschetti Y
Sanzone V
Mur P
Decobert J
Datas A
Publication year
Publication venue
Energy Procedia

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Snippet

Abstract Tandem GaInP/GaAs//Si (inactive) solar cells were manufactured by direct wafer bonding under vacuum. At this early stage, an inactive silicon substrate was used (ie n+ Si substrate instead of an active np Si junction). Bonded devices presented an S-shaped JV …
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    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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