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Celinska et al., 2003 - Google Patents

Effects of scaling the film thickness on the ferroelectric properties of SrBi 2 Ta 2 O 9 ultra thin films

Celinska et al., 2003

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Document ID
7071006974626877833
Author
Celinska J
Joshi V
Narayan S
McMillan L
Paz de Araujo C
Publication year
Publication venue
Applied physics letters

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We have investigated the effect of reducing the thickness of strontium bismuth tantalate film to as low as 25 nm on its ferroelectric characteristics. A degradation of ferroelectric properties such as significant reduction in remanent polarization is generally observed with …
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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