[go: up one dir, main page]

Lee et al., 2022 - Google Patents

28-GHz CMOS Direct-Conversion RF Transmitter with Precise and Wide-Range Mismatch Calibration Techniques. Electronics 2022, 11, 840

Lee et al., 2022

View PDF
Document ID
7064348395522904417
Author
Lee Y
Kim B
Shin H
Publication year

External Links

Snippet

A millimeter-wave direct-conversion radio-frequency (RF) transmitter requires precise in- /quadrature-phase (I/Q) mismatch calibration and dc offset cancellation to minimize image rejection ratio (IRR) and LO feedthrough (LOFT) for ensuring satisfactory output spectral …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1425Balanced arrangements with transistors
    • H03D7/1441Balanced arrangements with transistors using field-effect transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041Functional aspects of demodulators
    • H03D2200/0088Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1425Balanced arrangements with transistors
    • H03D7/1433Balanced arrangements with transistors using bipolar transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/16Multiple-frequency-changing
    • H03D7/165Multiple-frequency-changing at least two frequency changers being located in different paths, e.g. in two paths with carriers in quadrature
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001Circuit elements of demodulators
    • H03D2200/0033Current mirrors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06Receivers
    • H04B1/16Circuits
    • H04B1/26Circuits for superheterodyne receivers
    • H04B1/28Circuits for superheterodyne receivers the receiver comprising at least one semiconductor device having three or more electrodes
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45361Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements

Similar Documents

Publication Publication Date Title
Ebrahimi et al. A 71–86-GHz phased array transceiver using wideband injection-locked oscillator phase shifters
JP7324233B2 (en) Wideband Low Noise Amplifier (LNA) with Reconfigurable Bandwidth for mmWave 5G Communication
Lin et al. 1024-QAM high image rejection $ E $-band sub-harmonic IQ modulator and transmitter in 65-nm CMOS process
Gao et al. A 20–44-GHz image-rejection receiver with> 75-dB image-rejection ratio in 22-nm CMOS FD-SOI for 5G applications
KR102492442B1 (en) Method and apparatus to detect lo leakage and image rejection using a single transistor
Iotti et al. A low-power 70–100-GHz mixer-first RX leveraging frequency-translational feedback
Gao et al. A 20–42-GHz IQ receiver in 22-nm CMOS FD-SOI with 2.7–4.2-dB NF and− 25-dBm IP1dB for wideband 5G systems
Ebrahimi et al. A high-fractional-bandwidth, millimeter-wave bidirectional image-selection architecture with narrowband LO tuning requirements
Jang et al. 120-GHz wideband I/Q receiver based on baseband equalizing technique
Afroz et al. $ W $-Band (92–100 GHz) Phased-Array Receive Channel With Quadrature-Hybrid-Based Vector Modulator
EP4020801A1 (en) Variable gain amplifiers with cross-couple switching arrangements
JP7202398B2 (en) Wideband matching co-design method of transmit/receive (T/R) switch and receiver front-end for broadband MIMO receiver for mmWave 5G communication
Carpenter et al. Fully integrated D-band direct carrier quadrature (I/Q) modulator and demodulator circuits in InP DHBT technology
Zhou et al. A− 28.5-dB EVM 64-QAM 45-GHz Transceiver for IEEE 802.11 aj
Deng et al. A 23–40-GHz phased-array receiver using 14-bit phase-gain manager and wideband noise-canceling LNA
Chen et al. A 62–85-GHz high linearity upconversion mixer with 18-GHz IF bandwidth
Lee et al. 28-GHz CMOS up-conversion mixer with improved LO second-harmonic leakage signal suppression for 5G applications
Wu et al. A dual-band millimeter-wave direct-conversion transmitter with quadrature error correction
Lee et al. 28-GHz CMOS Direct-Conversion RF Transmitter with Precise and Wide-Range Mismatch Calibration Techniques. Electronics 2022, 11, 840
Yin et al. A 0.1–6.0-GHz dual-path SDR transmitter supporting intraband carrier aggregation in 65-nm CMOS
Testa et al. A complementary ring mixer driven by a single-ended LO in 22-nm FD-SOI CMOS for K and Ka-bands
Ma et al. A 35–105 GHz high image-rejection-ratio IQ receiver with integrated LO doubler and> 40 dB IRR
Del Rio et al. Multi-Gbps tri-band 28/38/60-GHz CMOS transmitter for millimeter-wave radio system-on-chip
Shaheen et al. A fully integrated 4× 2 element CMOS RF phased array receiver for 5G
Slater et al. Enhancing Continuous Beam Angle Resolution for Next Generation Wireless Systems: A Multi-Stage Phase-Shifting Polyphase Filters Approach