Lee et al., 2022 - Google Patents
28-GHz CMOS Direct-Conversion RF Transmitter with Precise and Wide-Range Mismatch Calibration Techniques. Electronics 2022, 11, 840Lee et al., 2022
View PDF- Document ID
- 7064348395522904417
- Author
- Lee Y
- Kim B
- Shin H
- Publication year
External Links
Snippet
A millimeter-wave direct-conversion radio-frequency (RF) transmitter requires precise in- /quadrature-phase (I/Q) mismatch calibration and dc offset cancellation to minimize image rejection ratio (IRR) and LO feedthrough (LOFT) for ensuring satisfactory output spectral …
- 230000001702 transmitter 0 title abstract description 53
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1433—Balanced arrangements with transistors using bipolar transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
- H03D7/165—Multiple-frequency-changing at least two frequency changers being located in different paths, e.g. in two paths with carriers in quadrature
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0001—Circuit elements of demodulators
- H03D2200/0033—Current mirrors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/26—Circuits for superheterodyne receivers
- H04B1/28—Circuits for superheterodyne receivers the receiver comprising at least one semiconductor device having three or more electrodes
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45361—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Ebrahimi et al. | A 71–86-GHz phased array transceiver using wideband injection-locked oscillator phase shifters | |
JP7324233B2 (en) | Wideband Low Noise Amplifier (LNA) with Reconfigurable Bandwidth for mmWave 5G Communication | |
Lin et al. | 1024-QAM high image rejection $ E $-band sub-harmonic IQ modulator and transmitter in 65-nm CMOS process | |
Gao et al. | A 20–44-GHz image-rejection receiver with> 75-dB image-rejection ratio in 22-nm CMOS FD-SOI for 5G applications | |
KR102492442B1 (en) | Method and apparatus to detect lo leakage and image rejection using a single transistor | |
Iotti et al. | A low-power 70–100-GHz mixer-first RX leveraging frequency-translational feedback | |
Gao et al. | A 20–42-GHz IQ receiver in 22-nm CMOS FD-SOI with 2.7–4.2-dB NF and− 25-dBm IP1dB for wideband 5G systems | |
Ebrahimi et al. | A high-fractional-bandwidth, millimeter-wave bidirectional image-selection architecture with narrowband LO tuning requirements | |
Jang et al. | 120-GHz wideband I/Q receiver based on baseband equalizing technique | |
Afroz et al. | $ W $-Band (92–100 GHz) Phased-Array Receive Channel With Quadrature-Hybrid-Based Vector Modulator | |
EP4020801A1 (en) | Variable gain amplifiers with cross-couple switching arrangements | |
JP7202398B2 (en) | Wideband matching co-design method of transmit/receive (T/R) switch and receiver front-end for broadband MIMO receiver for mmWave 5G communication | |
Carpenter et al. | Fully integrated D-band direct carrier quadrature (I/Q) modulator and demodulator circuits in InP DHBT technology | |
Zhou et al. | A− 28.5-dB EVM 64-QAM 45-GHz Transceiver for IEEE 802.11 aj | |
Deng et al. | A 23–40-GHz phased-array receiver using 14-bit phase-gain manager and wideband noise-canceling LNA | |
Chen et al. | A 62–85-GHz high linearity upconversion mixer with 18-GHz IF bandwidth | |
Lee et al. | 28-GHz CMOS up-conversion mixer with improved LO second-harmonic leakage signal suppression for 5G applications | |
Wu et al. | A dual-band millimeter-wave direct-conversion transmitter with quadrature error correction | |
Lee et al. | 28-GHz CMOS Direct-Conversion RF Transmitter with Precise and Wide-Range Mismatch Calibration Techniques. Electronics 2022, 11, 840 | |
Yin et al. | A 0.1–6.0-GHz dual-path SDR transmitter supporting intraband carrier aggregation in 65-nm CMOS | |
Testa et al. | A complementary ring mixer driven by a single-ended LO in 22-nm FD-SOI CMOS for K and Ka-bands | |
Ma et al. | A 35–105 GHz high image-rejection-ratio IQ receiver with integrated LO doubler and> 40 dB IRR | |
Del Rio et al. | Multi-Gbps tri-band 28/38/60-GHz CMOS transmitter for millimeter-wave radio system-on-chip | |
Shaheen et al. | A fully integrated 4× 2 element CMOS RF phased array receiver for 5G | |
Slater et al. | Enhancing Continuous Beam Angle Resolution for Next Generation Wireless Systems: A Multi-Stage Phase-Shifting Polyphase Filters Approach |