Oh et al., 2022 - Google Patents
Sub-THz switch-less reconfigurable triple-/push-push dual-band VCO for 6G communicationOh et al., 2022
View PDF- Document ID
- 6944653859255208840
- Author
- Oh S
- Kim J
- Oh J
- Publication year
- Publication venue
- 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
External Links
Snippet
This work presents a novel switch-less reconfigurable triple-/push-push dual-band VCO topology and design methods for a W-band metal-oxide-semiconductor (CMOS) voltage- controlled oscillator (VCO). A clover-shaped inductor with a three-port connection and single …
- 238000004891 communication 0 title description 4
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1293—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0062—Bias and operating point
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
- H03B2200/0042—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor the capacitance diode being in the feedback path
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/025—Varying the frequency of the oscillations by electronic means the means being an electronic switch for switching in or out oscillator elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B1/00—Details
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
- H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
- H03B9/141—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C3/00—Angle modulation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Nakamura et al. | A push-push VCO with 13.9-GHz wide tuning range using loop-ground transmission line for full-band 60-GHz transceiver | |
Catli et al. | A 1.94 to 2.55 GHz, 3.6 to 4.77 GHz tunable CMOS VCO based on double-tuned, double-driven coupled resonators | |
Agrawal et al. | Series resonator mode switching for area-efficient octave tuning-range CMOS $ LC $ oscillators | |
Basaligheh et al. | A 65–81 GHz CMOS dual-mode VCO using high quality factor transformer-based inductors | |
Bajestan et al. | A low phase-noise wide tuning-range quadrature oscillator using a transformer-based dual-resonance ring | |
US10382015B2 (en) | Phase-tuning oscillators | |
Issakov et al. | A 52-to-61 GHz Push-Push VCO in 28 nm CMOS | |
Oh et al. | Sub-THz switch-less reconfigurable triple-/push-push dual-band VCO for 6G communication | |
Wang | A fully integrated W-band push-push CMOS VCO with low phase noise and wide tuning range | |
Yi et al. | A 100 GHz transformer-based varactor-less VCO with 11.2% tuning range in 65nm CMOS technology | |
Catli et al. | A 0.5-V 3.6/5.2 GHz CMOS multi-band LC VCO for ultra low-voltage wireless applications | |
Ma et al. | A 75.7 GHz to 102GHz rotary-traveling-wave VCO by tunable composite right/left hand T-line | |
Vigilante et al. | A dual-band E-band quadrature VCO with switched coupled transformers in 28nm HPM bulk CMOS | |
Forsberg et al. | Two mm-wave VCOs in 28-nm UTBB FD-SOI CMOS | |
Shu et al. | A cascaded mode-switching sub-sampling PLL with quadrature dual-mode voltage waveform-shaping oscillator | |
Balodi et al. | Ultra-wideband Quadrature LC-VCO using Capacitor-Bank and backgate topology with on-chip spirally stacked inductor in 0.13 μm RF-CMOS process covering S–C bands | |
Bajestan et al. | A 5.12–12.95 GHz triple-resonance low phase noise CMOS VCO for software-defined radio applications | |
Lee et al. | An extremely low power 2 GHz CMOS LC VCO for wireless communication applications | |
Oh et al. | W-band switch-less reconfigurable-push dual-band VCO using clover-shaped inductor and robust triple cores for 6G communications | |
Seshan et al. | Design of low power 2.4 GHz CMOS LC oscillators with low phase-noise and large tuning range | |
Jamal et al. | A low-power K-band Colpitts VCO with 30% tuning range in a 130 nm SiGe BiCMOS technology | |
Chiang et al. | A Highly Efficient 0.2 THz Varactor-Less VCO with-7 dBm Output Power in 130nm SiGe | |
Saad et al. | An Ultra-Compact Multi-Band VCO Achieving− 196 dB FoMA with Single-Ended Tunable Active Inductor | |
Yoon et al. | Cross-coupled differential oscillator MMICs with low phase-noise performance | |
Jalili et al. | A 219-to-238-GHz coupled standing-wave VCO with 3.4-dBm peak output power in 65nm CMOS |