Bassiri-Gharb et al., 2014 - Google Patents
Chemical solution growth of ferroelectric oxide thin films and nanostructuresBassiri-Gharb et al., 2014
View PDF- Document ID
- 69080058165121927
- Author
- Bassiri-Gharb N
- Bastani Y
- Bernal A
- Publication year
- Publication venue
- Chemical Society Reviews
External Links
Snippet
Chemical solution deposition (CSD) provides a low-cost, versatile approach for processing of thin and ultrathin ferroelectric films, as well as short and high aspect ratio ferroelectric nanostructures. This review discusses the state of the art in the processing of ferroelectric …
- 239000010409 thin film 0 title abstract description 76
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Bassiri-Gharb et al. | Chemical solution growth of ferroelectric oxide thin films and nanostructures | |
Han et al. | Nanostructured ferroelectrics: fabrication and structure–property relations | |
US8866367B2 (en) | Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making | |
Vila-Fungueiriño et al. | Integration of functional complex oxide nanomaterials on silicon | |
US9761785B2 (en) | Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing | |
US20150298161A1 (en) | Preferentially oriented perovskite-related thin film | |
JP2004345939A (en) | Lead zirconate titanate-based film, dielectric element, and method of manufacturing dielectric film | |
JP2009221037A (en) | Piezoelectric body, piezoelectric element, and piezoelectric actuator | |
Lee et al. | Sol-gel processing and nanoscale characterization of (Bi0. 5Na0. 5) TiO3-SrTiO3 lead-free piezoelectric thin films | |
JPH08502628A (en) | Method for producing layered superlattice material and electronic device including the same | |
Abou Dargham et al. | Synthesis and electrical properties of lead-free piezoelectric Bi0. 5Na0. 5TiO3 thin films prepared by Sol-Gel method | |
Falmbigl et al. | BaTiO3 thin films from atomic layer deposition: a superlattice approach | |
US11591710B2 (en) | Crystallization of amorphous multicomponent ionic compounds | |
Jovanovic et al. | Tiling the silicon for added functionality: PLD growth of highly crystalline STO and PZT on graphene oxide-buffered silicon surface | |
Kayasu et al. | The effect of Nb doping on dielectric and ferroelectric properties of PZT thin films prepared by solution deposition | |
JP5461951B2 (en) | Manufacturing method of ceramic film | |
Yang et al. | Mechanism of grain growth and excellent polarization, dielectric relaxtion of La3+, Nd3+ modified PZT nano-films prepared by sol–gel technique | |
Manguele et al. | Highly textured Pt thin film grown at very low temperature using Ca2Nb3O10 nanosheets as seed layer | |
Augustine et al. | Realization of 1 μm thick, crack-free and smooth PMN-PT film in the MPB through PLD: A comprehensive study | |
Etin et al. | Controlled Elemental Depth Profile in Sol–Gel‐Derived PZT Films | |
Rémondière et al. | Synthesis and crystallization pathway of Na0. 5Bi0. 5TiO3 thin film obtained by a modified sol–gel route | |
Luo | Colloidal processing of PMN-PT thick films for piezoelectric sensor applications | |
Jiao et al. | Influence of oxygen pressure on the electrical properties of Mn-doped Bi0. 5Na0. 5TiO3BaTiO3 thin films by pulsed laser deposition | |
Tue et al. | Fine-patterning of sol-gel derived PZT film by a novel lift-off process using solution-processed metal oxide as a sacrificial layer | |
Yang et al. | Highly (1 0 0)-textured Pb (Zr0. 52Ti0. 48) O3 film derived from a modified sol–gel technique using inorganic zirconium precursor |