Biryukov, 2019 - Google Patents
Template modeling of a p-channel MOSFETBiryukov, 2019
View PDF- Document ID
- 6843931037331633382
- Author
- Biryukov V
- Publication year
- Publication venue
- Журнал радиоэлектроники
External Links
Snippet
A new MOSFET model for liquid-helium temperatures is introduced for needs of analog circuits designers. This model is created by the replacement of certain parameters of the original physical compact model by the quotient of power series of a gate and drain …
- 230000005684 electric field 0 abstract description 7
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8614570B2 (en) | Reference current source circuit including added bias voltage generator circuit | |
| CA3031736A1 (en) | Complementary current field-effect transistor devices and amplifiers | |
| Biryukov | Template modeling of a p-channel MOSFET | |
| Akbari et al. | Input offset estimation of CMOS integrated circuits in weak inversion | |
| KR20180004268A (en) | Reference voltages | |
| Colombo et al. | A CMOS 25.3 ppm/C bandgap voltage reference using self-cascode composite transistor | |
| US10476499B2 (en) | Low power consumption power-on reset circuit and reference signal circuit | |
| Chauhan et al. | Compact modeling of lateral nonuniform doping in high-voltage MOSFETs | |
| Chu et al. | A PVT-independent constant-$ g_ {m} $ bias technique based on analog computation | |
| Rakus et al. | Comparison of gate-driven and bulk-driven current mirror topologies | |
| Biryukov et al. | Measurement-based MOSFET model for helium temperatures | |
| Walko et al. | RF S-parameter degradation under hot carrier stress | |
| Sharma et al. | Recent enhancements in the standard BSIM-BULK MOSFET model | |
| Nowbahari et al. | Weak inversion model of an inverting CMOS Schmitt trigger | |
| Nateghi et al. | A self-healing technique using ZTC biasing for PVT variations compensation in 65nm CMOS technology | |
| Andersson et al. | Direct experimental verification of shot noise in short channel MOS transistors | |
| Nagy et al. | EKV Model for Bulk-Driven Circuit Design Using g mb/I D Method | |
| Kuswan et al. | Temperature-Insensitive MOS Reference Current Source Circuit and its Startup Circuit | |
| de Carvalho Ferreira et al. | Extraction of MOS parameters from BSIM3v3 model using minimum square method for quick manual design | |
| Ida et al. | MOS Reference Current Source Insensitive to Temperature Variation | |
| Widemann et al. | Analytic investigations on the susceptibility of nonlinear analog circuits to substrate noise | |
| de Lima et al. | Performance and variability trade-offs of CMOS PTAT generator topologies for voltage reference applications | |
| Pilipenko | Application of Template Models for Current-Voltage Characteristics Approximation of Complementary MOSFETs | |
| Quarata et al. | Analysis and optimization of voltage reference circuits based on sub-1V MOSFETs operating in different CMOS technologies | |
| Ștefănescu et al. | Analog-Multiply Current-Mode Circuit |