[go: up one dir, main page]

Issakov et al., 2009 - Google Patents

Extension of thru de-embedding technique for asymmetrical and differential devices

Issakov et al., 2009

Document ID
683552251055239243
Author
Issakov V
Wojnowski M
Thiede A
Maurer L
Publication year
Publication venue
IET circuits, devices & systems

External Links

Snippet

Accurate radiofrequency (RF) characterisation of on-chip or on-board devices often requires de-embedding to account for parallel and serial parasitics associated with bonding pads and interconnects. It is usually performed by well-known techniques such as Open-Short …
Continue reading at digital-library.theiet.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/18Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects

Similar Documents

Publication Publication Date Title
Cho et al. A novel cascade-based de-embedding method for on-wafer microwave characterization and automatic measurement
Wojnowski et al. A 77 GHz SiGe mixer in an embedded wafer level BGA package
Issakov et al. Extension of thru de-embedding technique for asymmetrical and differential devices
Cho et al. A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs
Chang et al. A de-embedding method for extracting S-parameters of vertical interconnect in advanced packaging
Yen et al. A physical de-embedding method for silicon-based device applications
Quintanel et al. On-wafer multi-port circuits characterization technique with a two-port VNA
Kang et al. On-chip coupled transmission line modeling for millimeter-wave applications using four-port measurements
Tretiakov et al. A new on-wafer de-embedding technique for on-chip RF transmission line interconnect characterization
Jahn et al. Characterization and modeling of wire bond interconnects up to 100 GHz
Issakov et al. Considerations on the de-embedding of differential devices using two-port techniques
Hamidian et al. Extraction of RF feeding structures for accurate device modeling up to 100 GHz
Andrei et al. Coupling on-wafer measurement errors and their impact on calibration and de-embedding up to 110 GHz for CMOS millimeter wave characterizations
Sekiguchi et al. On the validity of bisection-based thru-only de-embedding
Abdo et al. Comparison between L-2L and thru-reflect-line de-embedding methods for W-band CMOS amplifier design
Saadi et al. MOM capacitance characterization in G-Band using on-wafer 3D-TRL calibration
Gruner et al. Lumped element MIM capacitor model for Si-RFICs
Khelifi et al. Pad-open-short de-embedding method extended for 3-port devices and non-ideal standards
Hamidian et al. Device characterization in 90 nm CMOS up to 110 GHz
Andrei et al. Efficient de-embedding technique for 110-GHz deep-channel-MOSFET characterization
Çekiç et al. The performance effects of bondwire characteristics up to mmWave frequencies
Hirano et al. Accuracy investigation of the de-embedding technique using open and short patterns for on-wafer RF characterization
Lee et al. Circuit modeling of multi-layer ceramic capacitors using s-parameter measurements
Deng et al. Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band
Issakov et al. An Extension of Thru De-embedding Technique for Characterization of Asymmetrical and Differential Devices