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Xu et al., 2003 - Google Patents

Superjunction LDMOS with drift region charge-balanced by distributed hexagon P-islands

Xu et al., 2003

Document ID
6831675364476364652
Author
Xu H
Ma V
Sun I
Ng W
Liang Y
Publication year
Publication venue
2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No. 03TH8668)

External Links

Snippet

A new device structure suitable for practical implementation of silicon superjunction LDMOS is proposed. With hexagonal p-islands distributed in the drift region of a conventional LDMOS (SJ-HexLDMOS), the tradeoff between breakdown voltage (BV/sub dss/) and …
Continue reading at ieeexplore.ieee.org (other versions)

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