Zheng et al., 1996 - Google Patents
High-efficiency drift-field thin-film silicon solar cells by liquid-phase epitaxy and substrate thinningZheng et al., 1996
- Document ID
- 6800957396833429265
- Author
- Zheng G
- Zhang W
- Shi Z
- Thorp D
- Green M
- Publication year
- Publication venue
- Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference-1996
External Links
Snippet
Silicon films of 20-35/spl mu/m thickness were grown by LPE on electrically inactive heavily doped p/sup++/-type CZ silicon substrates from In/Ga solutions. A Ga doping gradient was introduced throughout the film to produce a drift-field in the base of the solar cell, thus …
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [Si] 0 title abstract description 27
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
- H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU717476B2 (en) | Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell | |
Gordon et al. | 8% Efficient thin‐film polycrystalline‐silicon solar cells based on aluminum‐induced crystallization and thermal CVD | |
Green | Silicon solar cells: evolution, high-efficiency design and efficiency enhancements | |
Sinton et al. | 27.5-percent silicon concentrator solar cells | |
Aberle et al. | High‐eficiency silicon solar cells: Si/SiO2, interface parameters and their impact on device performance | |
Knobloch et al. | Solar cells with efficiencies above 21% processed from Czochralski grown silicon | |
Vitanov et al. | High-efficiency solar cell using a thin porous silicon layer | |
US7964789B2 (en) | Germanium solar cell and method for the production thereof | |
US20150068597A1 (en) | Surface passivation of silicon based wafers | |
Zhao et al. | 24% efficient silicon solar cells | |
Krotkus et al. | Efficiency improvement by porous silicon coating of multicrystalline solar cells | |
US20020002992A1 (en) | Photovoltaic element | |
WO2011005447A2 (en) | Semiconductor optical detector structure | |
Lee et al. | Boron back surface field using spin-on dopants by rapid thermal processing | |
Garner et al. | An interdigitated back contact solar cell with high-current collection | |
Zheng et al. | High-efficiency drift-field thin-film silicon solar cells by liquid-phase epitaxy and substrate thinning | |
Blakers | High efficiency crystalline silicon solar cells | |
Zhao et al. | High‐efficiency multicrystalline silicon solar cells using standard high‐temperature, float‐zoned cell processing | |
Zheng et al. | High-efficiency drift-field thin-film silicon solar cells grown on electronically inactive substrates | |
Simashkevich et al. | Efficient ITO-n Si solar cells with a textured silicon surface | |
Hong et al. | Back-contacted thin-film GaAs solar cells | |
Cheek et al. | MIS and SIS solar cells on polycrystalline silicon | |
Sharma et al. | Si and GaAs SIS heterostructure solar cells using spray-deposited ITO | |
Pakhuruddin et al. | Properties of laser-crystallised silicon thin-film solar cells on textured glass | |
Hamoudi et al. | Effect of rapid thermal annealing on photovoltaic properties of silicon solar cell fabricated by one-step laser doping in liquid |