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Zheng et al., 1996 - Google Patents

High-efficiency drift-field thin-film silicon solar cells by liquid-phase epitaxy and substrate thinning

Zheng et al., 1996

Document ID
6800957396833429265
Author
Zheng G
Zhang W
Shi Z
Thorp D
Green M
Publication year
Publication venue
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference-1996

External Links

Snippet

Silicon films of 20-35/spl mu/m thickness were grown by LPE on electrically inactive heavily doped p/sup++/-type CZ silicon substrates from In/Ga solutions. A Ga doping gradient was introduced throughout the film to produce a drift-field in the base of the solar cell, thus …
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    • Y02E10/543Solar cells from Group II-VI materials
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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