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Liu et al., 2002 - Google Patents

Subsurface dopant-induced features on the Si (100) 2/spl times/1: H surface: fundamental study and applications

Liu et al., 2002

Document ID
679180364731202857
Author
Liu L
Yu J
Lyding J
Publication year
Publication venue
IEEE transactions on nanotechnology

External Links

Snippet

The lack of surface states within the bandgap of the perfect Si (100) 2/spl times/1: H surface opens the way to scanning tunneling microscopy studies of dopant atom sites in Si (100). Both n-and p-type dopant-induced features were observed in filled-and empty-states …
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Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

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