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Surma et al., 1998 - Google Patents

Effect of pressure treatment on electrical properties of hydrogen-doped silicon

Surma et al., 1998

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Document ID
6680972580391396820
Author
Surma B
Misiuk A
Jun J
Rozental M
Wnuk A
Ulyashin A
Antonova I
Popov V
Job R
Publication year
Publication venue
ASDAM'98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No. 98EX172)

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Snippet

Annealing of CZ-Si at 450/spl deg/C under enhanced argon pressure (HP) results in significant increase of electron concentration. FTIR measurements confirmed that enhanced double thermal donors (TDD) generation in CZ-Si is responsible for this phenomenon. In …
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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