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Li et al., 2003 - Google Patents

High-saturation-current InP-InGaAs photodiode with partially depleted absorber

Li et al., 2003

Document ID
6597507864345231897
Author
Li X
Li N
Zheng X
Demiguel S
Campbell J
Tulchinsky D
Williams K
Publication year
Publication venue
IEEE Photonics Technology Letters

External Links

Snippet

A high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated. Optical responsivity of 0.58 A/W and over 1.1 W of dissipated electrical power is achieved. Small signal compression current of 110 and 57 mA is measured at radio …
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