[go: up one dir, main page]

Lal et al., 2016 - Google Patents

A broadband, compact 140–170GHz double side-band receiver in 90nm SiGe technology

Lal et al., 2016

Document ID
637550696168351526
Author
Lal D
Abbasi M
Ricketts D
Publication year
Publication venue
2016 46th European Microwave Conference (EuMC)

External Links

Snippet

This paper reports the design and characterization results of a broadband, compact 140-170 GHz Double Side-Band (DSB) receiver fabricated in a 90 nm SiGe process. The design is based on a balanced Gilbert cell, with on-chip integrated LO and RF baluns and an IF …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1433—Balanced arrangements with transistors using bipolar transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041—Functional aspects of demodulators
    • H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/26—Circuits for superheterodyne receivers
    • H04B1/28—Circuits for superheterodyne receivers the receiver comprising at least one semiconductor device having three or more electrodes
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1408—Balanced arrangements with diodes
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001—Circuit elements of demodulators
    • H03D2200/0033—Current mirrors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041—Functional aspects of demodulators
    • H03D2200/0043—Bias and operating point
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/16—Multiple-frequency-changing
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197—Pl types
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45361—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance

Similar Documents

Publication Publication Date Title
Lee et al. An 80-Gb/s 300-GHz-band single-chip CMOS transceiver
Hara et al. A 32Gbit/s 16QAM CMOS receiver in 300GHz band
Wang A 1 V multi-gigahertz RF mixer core in 0.5/spl mu/m CMOS
US20080032659A1 (en) Sub-harmonic mixer and down converter with the same
Valdes-Garcia et al. 60 GHz transmitter circuits in 65nm CMOS
Fritsche et al. A Low-Power Broadband 200 GHz Down-Conversion Mixer with Integrated LO-Driver in 0.13$\mu $ m SiGe BiCMOS
Lee et al. A $ D $-band low-power gain-boosted up-conversion mixer with low LO power in 40-nm CMOS technology
Ahmed et al. Mixer-first extremely wideband 43–97 GHz RX frontend with broadband quadrature input matching and current mode transformer-based image rejection for massive MIMO applications
Ahmed et al. A SiGe-based wideband 220–310-GHz subharmonic receiver front-end for high resolution radar applications
Laemmle et al. A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology
Suh et al. A D-band multiplier-based OOK transceiver with supplementary transistor modeling in 65-nm bulk CMOS technology
Tomkins et al. A zero-IF 60GHz transceiver in 65nm CMOS with≫ 3.5 Gb/s links
US7672658B2 (en) Frequency-converting circuit and down converter with the same
Hara et al. 32-Gbit/s CMOS receivers in 300-GHz band
Shang et al. An 8mW ultra low power 60GHz direct-conversion receiver with 55dB gain and 4.9 dB noise figure in 65nm CMOS
Kim et al. A 135 GHz differential active star mixer in SiGe BiCMOS technology
Lal et al. A broadband, compact 140–170GHz double side-band receiver in 90nm SiGe technology
Ahmed et al. A SiGe-based broadband 140–170-GHz downconverter for high resolution FMCW radar applications
Lin et al. A W-band down-conversion mixer in 90 nm CMOS with excellent matching and port-to-port isolation for automotive radars
Steinweg et al. A 100-GHz-RF-bandwidth up-conversion mixer in 130 nm SiGe BiCMOS
Kraemer et al. A dual-gate 60GHz direct up-conversion mixer with active IF balun in 65nm CMOS
Testa et al. A 170-190 GHz two-elements phased-array receiver front-end for low-power applications
Tang et al. A 300 GHz SiGe double-balanced passive third harmonic mixer using pmos varactors
Ghaleb et al. A 180-GHz passive integrated SiGe down-conversion mixer with low loss and a broadband rat-race coupler design
Sheinman et al. A double balanced 81–86GHz EBAND active down conversion mixer in SiGe technology