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Mi et al., 1992 - Google Patents

Room‐temperature 1.3 μm electroluminescence from strained Si1− x Ge x/Si quantum wells

Mi et al., 1992

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Document ID
6366538447515195139
Author
Mi Q
Xiao X
Sturm J
Lenchyshyn L
Thewalt M
Publication year
Publication venue
Applied physics letters

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We report the first room‐temperature 1.3 μm electroluminescence from strained Si1− x Ge x/Si quantum wells. The electroluminescence is due to band‐edge carrier recombination, and its intensity increases linearly with the forward current up to 1700 A/cm2. The internal …
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