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Wang et al., 2024 - Google Patents

Effect of zinc and magnesium ion doping on leakage current behavior of Ba 0.6 Sr 0.4 TiO 3 thin film

Wang et al., 2024

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Document ID
6361252542306725034
Author
Wang H
Li B
Publication year
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RSC advances

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We report an in-depth analysis of the carrier conduction mechanisms in multilayer doped Ba0. 6Sr0. 4TiO3 films, which offers a significant new message for reducing the leakage current. First, Ba0. 6Sr0. 4TiO3 (BST) sol, Ba0. 6Sr0. 4Ti0. 99Zn0. 01O3 (ZBST) sol, and …
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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