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Augusto et al., 2009 - Google Patents

A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

Augusto et al., 2009

Document ID
6273692391408502693
Author
Augusto C
Forester L
Diniz P
Publication year
Publication venue
Infrared Technology and Applications XXXV

External Links

Snippet

Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 µm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend …
Continue reading at www.spiedigitallibrary.org (other versions)

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