[go: up one dir, main page]

Neuman et al., 1969 - Google Patents

Structural dependence of strain gauge effect and surface resistivity for thin gold films

Neuman et al., 1969

Document ID
6239458812238083181
Author
Neuman M
Sutton W
Publication year
Publication venue
Journal of Vacuum Science and Technology

External Links

Snippet

Gold films of 80 to 500 Å thickness were deposited onto 6-mil-thick glass substrates, and continuous measurement of electrical and mechanical properties pertinent to the use of a film as a strain gauge element were made in situ. Gauge factors of greater than 100 for films …
Continue reading at pubs.aip.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides

Similar Documents

Publication Publication Date Title
US5801383A (en) VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film
Neuman et al. Structural dependence of strain gauge effect and surface resistivity for thin gold films
US4276535A (en) Thermistor
Caswell et al. Low‐Temperature Properties of Evaporated Lead Films
US5147523A (en) Thin film gas sensor
CN108807346B (en) Detector, thermistor, vanadium oxide film and manufacturing method thereof
Liu et al. Effect of nitrogen partial pressure on the TCR of magnetron sputtered indium tin oxide thin films at high temperatures
US3622901A (en) Negative-temperature-coefficient resistors in the form of thin layers and method of manufacturing the same
KR940002511B1 (en) Gas sensor element of tin oxide film
Pal et al. Effect of grain-boundary scattering on the electrical resistivity of indium films
US3503030A (en) Indirectly-heated thermistor
Knight Effect of structure on the piezoresistive properties of thin metal films
Siddall et al. Vacuum-deposited metal film resistors
US6103023A (en) Thin films of quasicrystalline alloys, their preparation and their uses
Scarioni et al. Thermoelectric power in thin film Fe–CuNi alloy (type-J) couples
US3498832A (en) Material and method for producing cermet resistors
Bishay et al. Temperature coefficient of the surface resistivity of two-dimensionalisland gold films
US3470426A (en) Thin film circuit element of amorphous semiconductor exhibiting a voltage variable non-linear resistance with symmetrical characteristics
Perkins Conduction properties and microstructure of Metal/SiO cermet thin films produced by recoil atom implantation
Angadi et al. Thermoelectric effect in ytterbium and samarium films
Beynon et al. On the electrical resistivity and structural properties of evaporated manganese/silicon oxide cermet films
JP2645552B2 (en) Silicon / germanium / gold mixed crystal thin film conductor
JP2582290B2 (en) Indium thin film RTD
McMASTER et al. Semiconductor behavior in amorphous Au SiO thin films
Wang et al. Structures and Electric Characteristics of Al–N Thin Films Prepared by RF Sputtering