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Medjdoub et al., 2011 - Google Patents

Beyond 100 ghz aln/gan hemts on silicon substrate

Medjdoub et al., 2011

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Document ID
61520327178647816
Author
Medjdoub F
Zegaoui M
Rolland N
Publication year
Publication venue
Electronics letters

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A report is presented on high-speed 100 nm AlN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistive silicon substrate. The device delivers an extrinsic peak transconductance gm= 530 mS/mm, a maximum current of 1.74 A/mm, and current …
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