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Greve, 1997 - Google Patents

GexSi1-x Epitaxial Layer Growth and Application to Integrated Circuits

Greve, 1997

Document ID
6058284290214967864
Author
Greve D
Publication year
Publication venue
Thin Films

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Snippet

Germanium-silicon alloys have attracted considerable attention over the past several years, and it is now recognized that the Ge x Si 1-x/Si material system is the most practical route to heterojunction devices on silicon substrates. Early work by Kasper et al.(1) demonstrated …
Continue reading at www.sciencedirect.com (other versions)

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