Mizumura et al., 2014 - Google Patents
Development of low-temperature sintered nano-silver pastes using MO technology and resin reinforcing technologyMizumura et al., 2014
- Document ID
- 6046604059517583483
- Author
- Mizumura N
- Sasaki K
- Publication year
- Publication venue
- 2014 International Conference on Electronics Packaging (ICEP)
External Links
Snippet
Traditional thick film technology is widely used in various electronics products. With that technology, there are two types of pastes: a high-temperature sintering type and a low- temperature processing type. The high-temperature sintering type contains glass and …
- 229910052709 silver 0 title abstract description 73
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Singh et al. | Recent developments on epoxy-based thermally conductive adhesives (TCA): a review | |
Sakamoto et al. | Thermal fatigue of Ag flake sintering die-attachment for Si/SiC power devices | |
JP7145876B2 (en) | Nitride ceramic resin composite | |
CN104228186B (en) | A kind of high heat conduction high-performance aluminum matrix copper-clad laminate and preparation method thereof | |
Sakamoto et al. | Microstructural stability of Ag sinter joining in thermal cycling | |
Khairul Anuar et al. | Effect of different types of silver and epoxy systems on the properties of silver/epoxy conductive adhesives | |
JP5899303B2 (en) | High performance die attach adhesive (DAA) nanomaterials for high brightness LEDs | |
Mizumura et al. | Development of low-temperature sintered nano-silver pastes using MO technology and resin reinforcing technology | |
CN104830248B (en) | A kind of high-termal conductivity heat-conducting glue and preparation method thereof | |
CN107709502A (en) | Composition for bonding heat dissipation material, heat dissipation material with adhesive, embedded substrate, and manufacturing method thereof | |
CN104588905A (en) | Ag-Cu-Ti/Sn nano-particle soldering paste and preparation method thereof | |
CN118480322A (en) | High-heat-conductivity semi-sintered silver colloid and preparation method and application thereof | |
Sasaki et al. | Development of low-temperature sintering nano-silver die attach materials for bare Cu application | |
JP5863323B2 (en) | Semiconductor device and manufacturing method of semiconductor device | |
Sasaki et al. | Development of low temperature sintered nano silver pastes using MO technology and resin reinforcing technology | |
Zhang et al. | Reliability behavior of a resin-free nanosilver paste at ultra-low temperature of 180 c | |
Sasaki et al. | Development of low-temperature sintering nano-ag pastes using lowering modulus technologies | |
TWI699409B (en) | Conductive composition for electromagnetic shielding, electromagnetic shielding layer formed of the same, circuit board laminate comprising the same, and method of forming electromagnetic shielding layer | |
Lu et al. | The influence of sintering process on thermal properties of nano-silver paste | |
Yu et al. | Silver-based thermal interface materials with low thermal resistance | |
CN110957228A (en) | Aluminum heat dissipation substrate with enhanced silicon carbide surface and manufacturing method thereof | |
Jin et al. | Novel conductive paste using hybrid silver sintering technology for high reliability power semiconductor packaging | |
CN105624509A (en) | Preparing method of electronic packaging material | |
Wang et al. | Joint analysis and reliability test of epoxy-based nano silver paste under different pressure-less sintering processes | |
Fukazawa et al. | Development of Low-temperature Sintering Materials for Bare Cu lead-frame |