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Han et al., 2008 - Google Patents

Design of bulk fin-type field-effect transistor considering gate work-function

Han et al., 2008

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Document ID
6040738653240769637
Author
Han K
Choi B
Kwon H
Lee J
Publication year
Publication venue
Japanese Journal of Applied Physics

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Snippet

We proposed a new body-tied triple-gate fin-type field-effect transistor (bulk FinFET) which has different gate work-functions on the top-and side-channel regions. The effect of gate work-function on the characteristics of the bulk FinFETs was studied by using three …
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