[go: up one dir, main page]

Vögl et al., 2024 - Google Patents

Enhanced forward emission by backside mirror design in micron-sized LEDs

Vögl et al., 2024

View HTML
Document ID
5915200920977316318
Author
Vögl F
Avramescu A
Lex A
Waag A
Hetzl M
von Malm N
Publication year
Publication venue
Optics Letters

External Links

Snippet

Tiny InGaN micro-LEDs (μ-LEDs) play a pivotal role in emerging display technologies, particularly augmented reality (AR) applications. Achieving both high internal quantum efficiency (IQE) and efficient light extraction efficiency (LEE) is essential. While wet chemical …
Continue reading at opg.optica.org (HTML) (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides

Similar Documents

Publication Publication Date Title
Oh et al. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures
Yin et al. Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays
Wei et al. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
Kim et al. Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures
Wei et al. Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO_2 photonic crystals
Tang et al. Enhanced light extraction from AlGaInP-based red light-emitting diodes with photonic crystals
Zhu et al. Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arrays
Mao et al. Surface patterning of nonscattering phosphors for light extraction
Hsiang et al. Tailoring the light distribution of micro-LED displays with a compact compound parabolic concentrator and an engineered diffusor
Zhang et al. Integrating remote reflector and air cavity into inclined sidewalls to enhance the light extraction efficiency for AlGaN-based DUV LEDs
Zhu et al. Design rules for white light emitters with high light extraction efficiency
Shi et al. Enhanced performance of GaN-based visible flip-chip mini-LEDs with highly reflective full-angle distributed Bragg reflectors
Li et al. Effect of flip-chip height on the optical performance of conformal white-light-emitting diodes
Lee et al. Enhancing light extraction mechanisms of GaN-based light-emitting diodes through the integration of imprinting microstructures, patterned sapphire substrates, and surface roughness
Wang et al. On the origin of the enhanced light extraction efficiency of DUV LED by using inclined sidewalls
Park et al. Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes
Lin et al. White thin-film flip-chip LEDs with uniform color temperature using laser lift-off and conformal phosphor coating technologies
Huang et al. Light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonics crystal
Horng et al. P-side up AlGaInP-based light emitting diodes with dot-patterned GaAs contact layers
Li et al. Impacts of p-GaN layer thickness on the photoelectric and thermal performance of AlGaN-based deep-UV LEDs
Vögl et al. Enhanced forward emission by backside mirror design in micron-sized LEDs
Tien et al. Enhanced light output power of thin film GaN-based high voltage light-emitting diodes
Jeong et al. Enhancement of light output power in GaN-based light-emitting diodes using hydrothermally grown ZnO micro-walls
Liu et al. Enhancing light extraction efficiency of the inclined-sidewall-shaped DUV micro-LED array by hybridizing a nanopatterned sapphire substrate and an air-cavity reflector
Zhang et al. Improved light output from InGaN LEDs by laser-induced dumbbell-like air-voids