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Mori et al., 1993 - Google Patents

GaAs heteroepitaxy on an epitaxial Si surface with a low‐temperature process

Mori et al., 1993

Document ID
5790536394783060037
Author
Mori H
Tachikawa M
Sugo M
Itoh Y
Publication year
Publication venue
Applied physics letters

External Links

Snippet

This letter reports the growth of an anti‐phase‐free GaAs layer on a (100) epitaxial Si substrate offset by 0.5° without high‐temperature treatment prior to growth. Atomic force microscopy shows that the epitaxial Si surface has regular steps prior to growth. The …
Continue reading at pubs.aip.org (other versions)

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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