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Macksey et al., 1980 - Google Patents

Optimization of GaAs power MESFET device and material parameters for 15-GHz operation

Macksey et al., 1980

Document ID
5707845100116857232
Author
Macksey H
Doerbeck F
Vail R
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

The results of recent 15-GHz measurements on GaAs power FET's are described. The microwave performance has been determined as a function of epitaxial doping level and thickness, gate recess depth, gate finger width, and source-drain spacing. The optimum …
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
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    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
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