[go: up one dir, main page]

Lee et al., 1981 - Google Patents

Very-high-speed back-illuminated InGaAs/InP PIN punch-through photodiodes

Lee et al., 1981

Document ID
5670479439775598783
Author
Lee T
Burrus C
Ogawa K
Dentai A
Publication year
Publication venue
Electronics Letters

External Links

Snippet

Very-high-speed back-illuminated InGaAs/InP PIN punch-through photodiodes Page 1 VERY-HIGH-SPEED BACK-ILLUMINATED InGaAs/lnP PIN PUNCH-THROUGH PHOTODIODES Indexing terms: Semiconductor devices and materials, Photodiodes, Photoelectric devices …
Continue reading at digital-library.theiet.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver
    • H04B10/693—Arrangements for optimizing the preamplifier in the receiver
    • H04B10/6932—Bandwidth control of bit rate adaptation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action

Similar Documents

Publication Publication Date Title
Lee et al. Very-high-speed back-illuminated InGaAs/InP PIN punch-through photodiodes
Campbell et al. High-performance avalanche photodiode with separate absorption ‘grading’and multiplication regions
Bowers et al. Ultrawide-band long-wavelength pin photodetectors
Ishibashi et al. Uni-traveling-carrier photodiodes
Susa et al. New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region
Lee et al. InGaAs/InP pin photodiodes for lightwave communications at the 0.95-1.65 µm wavelength
Campbell et al. Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes
Tomasetta et al. High sensitivity optical receivers for 1.0-1.4 µm fiber-optic systems
Matsushima et al. High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers
JPS6328506B2 (en)
US6759694B1 (en) Semiconductor phototransistor
Muramoto et al. High-output-voltage, high speed, high efficiency uni-travelling-carrier waveguide photodiode
Chandrasekhar et al. Monolithic integrated waveguide photodetector
Brain et al. Optical receivers for lightwave communication systems
Chen et al. High‐sensitivity Ga0. 47In0. 53As photoconductive detectors prepared by vapor phase epitaxy
DE3732626C2 (en)
Sano et al. Performance dependence of InGaAs MSM photodetectors on barrier-enhancement layer structures
Pearsall et al. GaInAs/InP large bandwidth (> 2 GHz) PIN detectors
Wei et al. Lateral high-speed metal-semiconductor-metal photodiodes on high-resistivity InGaAs
Hurm et al. 20 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs
Dixon et al. Lightwave device technology
Zebda et al. Design and performance of very high-speed In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As pin photodiodes grown by molecular beam epitaxy
JPH0353789B2 (en)
Agethen et al. InGaAs PIN detectors for frequencies above 100 GHz
Campbell et al. High-speed InP/InGaAsP/InGaAs avalanche photodiodes