[go: up one dir, main page]

Yasuoka et al., 2001 - Google Patents

High-efficiency PIN photo-diodes with a spot-size converter for 40 Gb/s transmission systems

Yasuoka et al., 2001

Document ID
5564423041360559999
Author
Yasuoka N
Makiuchi M
Miyata M
Aoki O
Ekawa M
Okazaki N
Takechi M
Kuwatsuka H
Soda H
Publication year
Publication venue
Proceedings 27th European Conference on Optical Communication (Cat. No. 01TH8551)

External Links

Snippet

High-efficiency pin photo-diodes with a spot-size converter for 40 Gb/s transmission systems Page 1 558 Proc. 27th Eur. Conf. on Opt. Comm. (ECOC’OI - Amsterdam) Th.M.2.4 HIGH-EFFICIENCY PIN PHOTO-DIODES WITH A SPOT-SIZE CONVERTER FOR 40 Gbls …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B6/122Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
    • G02B6/125Bends, branchings or intersections
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium

Similar Documents

Publication Publication Date Title
US8994004B2 (en) Hybrid silicon optoelectronic device and method of formation
Kato Ultrawide-band/high-frequency photodetectors
TWI403053B (en) Optoelectronic components
Xie et al. High-power and high-speed heterogeneously integrated waveguide-coupled photodiodes on silicon-on-insulator
Beling et al. Miniaturized waveguide-integrated pin photodetector with 120-GHz bandwidth and high responsivity
Achouche et al. High performance evanescent edge coupled waveguide unitraveling-carrier photodiodes for> 40-Gb/s optical receivers
Nada et al. Design and performance of high-speed avalanche photodiodes for 100-Gb/s systems and beyond
Yu et al. High-speed evanescently-coupled waveguide type-II MUTC photodiodes for zero-bias operation
Baumgartner et al. Novel CMOS-compatible ultralow capacitance hybrid III-V/Si photodetectors tested up to 32 Gbps NRZ
Akazawa et al. Low-capacitance ultrathin InGaAs membrane photodetector on Si slot waveguide toward receiverless system
Yasuoka et al. High-efficiency PIN photo-diodes with a spot-size converter for 40 Gb/s transmission systems
JPH0365621A (en) Combination of laser light detectors
JPH08250821A (en) Semiconductor light source
Huang et al. Recess-type waveguide integrated germanium on silicon avalanche photodiode
Kwon et al. Fabrication of 40 Gb/s Front‐End Optical Receivers Using Spot‐Size Converter Integrated Waveguide Photodiodes
Agashe et al. A monolithically integrated long-wavelength balanced photodiode using asymmetric twin-waveguide technology
Campbell Advances in photodetectors
Takeuchi et al. High-speed, high-power and high-efficiency photodiodes with evanescently coupled graded-index waveguide
Srinivasan et al. Hybrid O-band electro-absorption modulators on multi-micron waveguide silicon photonics platform for optical engine applications
CN116207609A (en) Temperature insensitive silicon light emitting chip based on bonding structure
Cao et al. Waveguide Ge/Si avalanche photodetector with ultra-high gain-bandwidth product of 1440GHz
Kuchibhotla et al. InP/InGaAsP/InGaAs SAGM avalanche photodiode with delta-doped multiplication region
Aihara et al. 60-GHz-bandwidth O-band membrane InGaAlAs electro-absorption modulator on Si platform
US4922497A (en) Optical logic circuit
Takeda et al. Integrated on-chip optical links using photonic-crystal lasers and photodetectors with current blocking trenches