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Takeuchi et al., 1999 - Google Patents

Improvement of far-field pattern in nitride laser diodes

Takeuchi et al., 1999

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Document ID
537536658350918119
Author
Takeuchi T
Detchprohm T
Iwaya M
Hayashi N
Isomura K
Kimura K
Yamaguchi M
Amano H
Akasaki I
Kaneko Y
Shioda R
Watanabe S
Hidaka T
Yamaoka Y
Kaneko Y
Yamada N
Publication year
Publication venue
Applied physics letters

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Snippet

We have clearly demonstrated a single spot in a far-field pattern of nitride-based laser diodes with a thick n-AlGaN layer/low-temperature-deposited buffer layer/sapphire. This AlGaN-based structure has realized a crack-free 1-μm-thick n-type Al 0.06 Ga 0.94 N …
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