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Shivam et al., 2021 - Google Patents

High-Performance Analysis of Recessed Gate AlN/β-Ga 2 O 3 HEMT

Shivam et al., 2021

Document ID
531033067334047272
Author
Shivam T
Saini B
Sunkaria R
Ranjan R
Publication year
Publication venue
2021 Fourth International Conference on Electrical, Computer and Communication Technologies (ICECCT)

External Links

Snippet

Normally-OFF HEMT is used for power electronics application. The proposed Recessed gate AlN/β-Ga 2 O 3 HEMT (RG-AlN/β-Ga 2 O 3 HEMT) is enhance the performance of device. In this paper analog performance of the RG-AlN/β-Ga 2 O 3 HEMT is analysis. Due …
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