[go: up one dir, main page]

Dallesasse et al., 1990 - Google Patents

Hydrogenation of Si‐and Be‐doped InGaP

Dallesasse et al., 1990

Document ID
527442653000391078
Author
Dallesasse J
Szafranek I
Baillargeon J
El‐Zein N
Holonyak Jr N
Stillman G
Cheng K
Publication year
Publication venue
Journal of applied physics

External Links

Snippet

Data are presented on the hydrogenation of Be‐doped (p‐type) and Si‐doped (n‐type) In1− x Ga x P epitaxial layers grown lattice matched to GaAs (x∼ 0.5). Low‐temperature (1.7 K) photoluminescence, electrochemical carrier concentration profiling, and scanning electron …
Continue reading at pubs.aip.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies

Similar Documents

Publication Publication Date Title
Johnson et al. Hydrogen passivation of shallow-acceptor impurities in p-type GaAs
Geisz et al. Photocurrent of 1 eV GaInNAs lattice-matched to GaAs
Dautremont‐Smith et al. Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure
Ploog et al. Doping of group III nitrides
US5571339A (en) Hydrogen passivated heteroepitaxial III-V photovoltaic devices grown on lattice-mismatched substrates, and process
Bürkle et al. Control of the residual doping of InAs/(GaIn) Sb infrared superlattices
Dautremont-Smith Hydrogen in III–V Semiconductors
US8674373B2 (en) Solid state gas dissociating device, solid state sensor, and solid state transformer
Dallesasse et al. Hydrogenation of Si‐and Be‐doped InGaP
Spitzer et al. Preparation and stabilization of anodic oxides on GaAs
Sturm et al. Minority‐carrier properties of thin epitaxial silicon films fabricated by limited reaction processing
Tell et al. Beryllium implantation doping of InGaAs
EP0833377B1 (en) Enhancement of hydrogenation of materials encapsulated by an oxide
Götz et al. Shallow and deep level defects in GaN
Ballamy et al. Premature failure in Pt-GaAs IMPATT's—Recombination-assisted diffusion as a failure mechanism
Wilson et al. Secondary ion mass spectrometry of dopant and impurity elements in wide bandgap semiconductors
Pong et al. Hydrogenation of wide‐band‐gap II‐VI semiconductors
Chen et al. Intrinsic Doping: A New Approach for n-Type Modulation Doping in InP-Based Heterostructures
Mizuta et al. Hydrogen passivation of impurities in GaP as studied by photoluminescence spectroscopy
López-López et al. Photoreflectance study of the substrate-film interface of GaAs homoepitaxial structures with different in situ substrate surface cleaning processes
Goorsky et al. Growth and Characterization of Highly Oxygen-Doped GaAs
Arehart et al. Traps in AlGaInP materials and devices lattice matched to GaAs for multi-junction solar cells
Swaminathan et al. Doping of Al0. 35Ga0. 65As grown by metal organic chemical vapor deposition with Zn or Se
Balcioglu et al. Effects of oxygen contamination on diffusion length in p+− n GaInNAs solar cells
Humer‐Hager et al. Photoluminescence in GaAs/AlGaAs heterojunction bipolar transistors: An investigation of the properties of the Mg acceptor