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Davis et al., 1990 - Google Patents

A review of the status of diamond and silicon carbide devices for high-power,-temperature, and-frequency applications

Davis et al., 1990

Document ID
5192405271679374787
Author
Davis R
Palmour J
Edmond J
Publication year
Publication venue
International Technical Digest on Electron Devices

External Links

Snippet

A review of the status of material and device development in both diamond and SiC is presented. The deposition of monocrystalline diamond at or below 1 atm at T< 1273 K has been achieved on diamond substrates; the film is polycrystalline on all other substrates, but …
Continue reading at ieeexplore.ieee.org (other versions)

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