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Torricelli et al., 2011 - Google Patents

Transport physics and device modeling of zinc oxide thin-film transistors—Part II: Contact resistance in short channel devices

Torricelli et al., 2011

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Document ID
5158680911593514850
Author
Torricelli F
Smits E
Meijboom J
Tripathi A
Gelinck G
Colalongo L
Kovács-Vajna Z
de Leeuw D
Cantatore E
Publication year
Publication venue
IEEE transactions on electron devices

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Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature …
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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