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Jin, 2022 - Google Patents

Impact ionization in AlGaAsSb avalanche photodiodes

Jin, 2022

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Document ID
5098126812960594741
Author
Jin X
Publication year

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This work aims to demonstrate a separate absorber, charge, multiplication (SACM) avalanche photodiode (APD) with GaAsSb/AlGaAsSb grown on InP. AlAsSb shows very dissimilar ionization coefficients between electrons (α) and holes (β) and extremely low …
Continue reading at etheses.whiterose.ac.uk (PDF) (other versions)

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    • H01L31/107—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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