Lee et al., 2022 - Google Patents
A compact CMOS broadband bidirectional digital transceiver frontend with capacitor bank and transformer matching network reuseLee et al., 2022
View PDF- Document ID
- 5022895288564874326
- Author
- Lee J
- Jung D
- Munzer D
- Wang H
- Publication year
- Publication venue
- IEEE Access
External Links
Snippet
This article presents a fully integrated bidirectional class-G digital Doherty switched capacitor transmitter (TX) and N-path Quadrature receiver (RX) in CMOS. Through sharing on-chip capacitor banks, typically occupying a major portion of the digital TX or RX chip …
- 239000003990 capacitor 0 title abstract description 46
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0294—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using vector summing of two or more constant amplitude phase-modulated signals
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
- H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Hu et al. | A broadband mixed-signal CMOS power amplifier with a hybrid class-G Doherty efficiency enhancement technique | |
US7486134B2 (en) | High efficiency load insensitive power amplifier | |
Ham et al. | CMOS power amplifier integrated circuit with dual-mode supply modulator for mobile terminals | |
Ye et al. | A digitally modulated 2.4 GHz WLAN transmitter with integrated phase path and dynamic load modulation in 65nm CMOS | |
CN102007699B (en) | Output stage for a digital RF transmitter, method for providing an RF output signal in a digital RF transmitter, and digital RF transmitter | |
Zhang et al. | Dual mode efficiency enhanced linear power amplifiers using a new balanced structure | |
Ghahremani et al. | Outphasing class-E power amplifiers: From theory to back-off efficiency improvement | |
Jung et al. | A CMOS 1.2-V hybrid current-and voltage-mode three-way digital Doherty PA with built-in phase nonlinearity compensation | |
Lie et al. | High-efficiency silicon RF power amplifier design–current status and future outlook | |
Shen et al. | A fully-integrated digital-intensive polar Doherty transmitter | |
Bechthum et al. | A CMOS polar class-G switched-capacitor PA with a single high-current supply, for LTE NB-IoT and eMTC | |
Vorapipat et al. | A wideband voltage mode Doherty power amplifier | |
Yang et al. | Quadrature switched/floated capacitor power amplifier with reconfigurable self-coupling canceling transformer for deep back-off efficiency enhancement | |
Nguyen et al. | A mm-wave switched-capacitor RFDAC | |
Ingels et al. | A Linear 28nm CMOS Digital Transmitter with 2× 12bit up to LO Baseband Sampling and− 58dBc C-IM3 | |
Walling | The switched-capacitor power amplifier: A key enabler for future communications systems | |
Lee et al. | A compact CMOS broadband bidirectional digital transceiver frontend with capacitor bank and transformer matching network reuse | |
US11764738B2 (en) | Segmented power amplifier arrangements with feedforward adaptive bias circuits | |
Diddi et al. | A watt-class, high-efficiency, digitally-modulated polar power amplifier in SOI CMOS | |
Hühn et al. | Highly compact GaN-based all-digital transmitter chain including SPDT switch for massive MIMO | |
Zhu et al. | A compact 2.4 GHz polar/quadrature reconfigurable digital power amplifier in 28nm logic LP CMOS | |
Staszewski et al. | Digital I/Q RF transmitter using time-division duplexing | |
Lee et al. | A compact wideband joint bidirectional class-G digital Doherty switched-capacitor transmitter and N-path quadrature receiver through capacitor bank sharing | |
Huhn et al. | GaN-Based digital transmitter chain utilizing push-pull gate drivers for high switching speed and built-in DPD | |
CN106100591A (en) | The power amplifier of a kind of high-efficiency and low-harmonic and mobile terminal thereof |